 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AEGIS SEMICONDUTORES LTDA. A5N:1000.XXH VOLTAGE RATINGS Part Number VRRM , VR - (V) rep. peak reverse voltage TJ = 0 to 125OC A5N:1000.22H A5N:1000.24H A5N:1000.26H A5N:1000.28H A5N:1000.30H A5N:1000.32H 2200 2400 2600 2800 3000 3200 Max. VRSM , VR - (V) Max. nonrep. peak reverse voltage TJ = 25 to 125OC 2300 2500 2700 2900 3100 3300 TJ = -40 to 0OC 2200 2400 2600 2800 3000 3200 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IT(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 1000 74 1600 14000 A 15000 937000 I2t Max. I2t capability 973000 I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 46700 300 200 5 10 5 24500(5500) +- 10% kA2s1/2 A/ms W W A V N(Lbf) A2s 60 Hz half cycle sine wave t = 10ms UNITS O O NOTES 180 half sine wave 50 Hz half cycle sine wave Initial T J = 125 C, rated VRRM applied after surge. Initial T J = 125 C, rated VRRM applied after surge. O O O C C A O C IT(RMS) Nom. RMS current ITSM Max. Peak non-rep. surge current A t = 8.3 ms O Initial T J = 125 C, no voltage applied after surge. O I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). TJ = 125OC, VD = VDRM, ITM = 3000A. Gate pulse: 20V, 20 W, apriximately 40% of non-repetitive value. O tp = 40 ms - AEGIS SEMICONDUTORES LTDA. A5N:1000.XXH CHARACTERISTICS PARAMETER VTM peak on-state voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rT1 Low-level resistance rT2 High-level resistance IL Latching current IH Holding current td Delay time MIN. ----------------TYP. --------------0.7 MAX. 2.26 1.31 1.55 0.48 0.38 800 400 1.5 mW mA mA ms ms UNITS V V TEST CONDITIONS Initial TJ = 25 OC, 50-60Hz half sine, I eak = 3000A. p TJ = 125OC Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)] , 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125O C, 12V anode. Gate pulse: 10V, 20W, 100ms. TC = 25OC, 12V anode. Initial IT = 15A. TC = 25 C, VD = rated VDRM , 50A resistive load. Gate pulse: 10V, 20W, 20ms, 0.1ms rise time. TJ = 125OC, ITM = 1000A, di/dt = 25A/ms, VR = -50V. dv/dt = 20 V/ms lin. To 80% rated VDRM . Gate: 0V, 100W. TJ = 125OC, ITM = 1000A, di/dt = 25A/ms, VR = 1V. dv/dt = 600 V/ms lin. To 40% rated VDRM . Gate: 0V, 100W. O 2 tq Turn-off time --- 125 250 tq(diode) Turn-off time with feedback diode IRM(REC) Recovery current QRR Recovered charge ------- --93 166 ----15 40 20 --------------460(16.0) TO-200AD 50 ms ----1000 300 75 300 150 5 3 0.200 0.025 0.025 0.027 0.010 --O O A mC TJ = 125O C, ITM = 1000A, diR/dt = 25A/ms. TJ = 125OC. Exp. to 100% or lin. To 80% V DRM , gate open. Higher dv/dt values avaliable. dv/dt Critical rate-of-rise of off- 300 state voltage --IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style ------0.3 0.3 --------------- V/ms TJ = 125OC, Exp. To 67% VDRM , gate open. mA mA V V TJ = 125 C, Rated VRRM and VDRM , gate open. TC = -40 C TC = 25 C TC = -40OC O O O +6V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TC = 25OC TC = 25 OC, Max. Value which will not trigger with rated V DRM anode-to-cathode. O C/W DC operation, double side cooled. C/W 180 sine wave, double side coolde. O C/W 120 rectangular wave, double side cooled. O O C/W Mtg. Surface smooth, flat and greased. Single side cooled. For double side, divide by 2. ----- g(oz.) JEDEC AEGIS SEMICONDUTORES LTDA. A5N:1000.XXH Maximum Allowable Case Temperature 130 130 Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 120 120 110 100 30 110 100 30 90 60 90 60 90 80 70 60 *Rectangular Waveform 90 120 DC 80 120 180 180 70 0 100 200 300 400 500 600 700 800 900 1000 *Sinusoidal Waveform 0 500 1000 Average Forward Current (A) A1F:400.XXHY (Single Side Cooled) RthJ-hs(DC) = 0.09K/W A1F:400.XXHY (Single Side Cooled) RthJ-hs(DC) = 0.09K/W Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics A1F:400.XXHY (Single Side Cooled) RthJ-hs(DC) = 0.09K/W A1F:400.XXHY (Single Side Cooled) RthJ-hs(DC) = 0.09K/W Maximum On-State Power Dissipation 12000 10000 Maximum On-State Power Dissipation Maximum Average Forward Power Loss (W) 10000 Maximum Average Forward Power Loss (W) 30 30 8000 8000 60 90 120 180 60 6000 90 120 6000 4000 180 DC 4000 2000 2000 0 0 200 400 600 800 1000 1200 1400 1600 1800 *Sinusoidal Waveform 0 0 * Rectangular Waveform 500 1000 1500 Average Forward Current (A) Average Forward Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics AEGIS SEMICONDUTORES LTDA. A5N:1000.XXH Forward Voltage Drop Characteristics 10 -1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (C/W) Steady State Value: RthJC=0.025 C/W (DC Operation) Instantaneous Forward Current (A) 1000 10-2 100 10-3 125C 25C 10 0.5 1.0 1.5 2.0 2.5 10-4 10-3 10-2 10-1 100 101 102 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance ZthJC Characteristics TO-200AD |
Price & Availability of A5N100030H
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |